Minneapolis, USA (March 24, 2009) – FSI International, Inc. (Nasdaq: FSI), the global leader in wafer fabrication, cleaning, and surface treatment equipment for semiconductor manufacturing, announced today that a major memory manufacturer has integrated FSI’s ZETA® cleaning system with its proprietary ViPR™ all-wet ashless cleaning technology into NAND flash production. This innovative approach is transforming traditional processes by replacing the conventional two-step ashing-cleaning method with a single, more efficient step.
The ZETA ViPR technology has already proven its value in the self-aligned polycide formation process, and now it is being adopted to address the challenges of advanced NAND manufacturing. The IC manufacturer evaluated the system's capability to remove photoresist without damaging the underlying structures, especially after ashing. The results were impressive—customers confirmed the effectiveness of the ashless stripping method, which not only reduces defects but also significantly shortens the overall production cycle.
“NAND technology continues to drive innovation through smaller device sizes,†said Don Mitchell, President and CEO of FSI. “Expanding ZETA ViPR into NAND manufacturing highlights the growing importance of total wet removal in advanced processes. As devices shrink, the value of this technology will only increase. We are delivering real, tangible benefits to our customers, including shorter cycle times, reduced capital investment, and lower operational costs.â€
The rising adoption of ZETA ViPR is driven by its ability to effectively remove residual metals without the need for ashing. In most photoresist removal processes, the technology enables complete removal through wet chemical reactions alone, even under extreme implant conditions. This eliminates the time, cost, and potential damage associated with ashing furnaces, while also preventing dopant and substrate losses.
For metal removal following the self-aligned metal silicide process, the ZETA ViPR system ensures that unreacted metal is removed without harming the delicate silicide layers. When combined with advanced NiPt self-aligned metal silicide processes, ViPR allows for lower annealing temperatures, reducing junction leakage and improving yield. This makes it a powerful tool for manufacturers striving for higher performance and reliability in their NAND flash products.
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