Detailed explanation of the role and development of silicon carbide materials

Emery, also known as silicon carbide (SiC), is produced by high-temperature smelting of electric furnaces such as quartz sand, petroleum coke (or coal char), and wood chips (which require the addition of salt when producing green silicon carbide). Silicon carbide is also a rare mineral in nature, Moissanite. Silicon carbide is also known as carbon silica. Among the non-oxide high-tech refractory raw materials such as C, N and B, silicon carbide is the most widely used and economical one, and it can be called gold steel sand or refractory sand. At present, China's industrial production of silicon carbide is divided into black silicon carbide and green silicon carbide, both hexagonal crystals, specific gravity of 3.20 ~ 3.25, microhardness of 2840 ~ 3320kg / mm2.

For the first time in 1905, humans discovered silicon carbide in meteorites. Now mainly from artificial synthesis, silicon carbide has many uses. It has a large span and can be used in solar photovoltaic industry, such as monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, etc. Semiconductor industry, piezoelectric crystal industry engineering processing materials.

Application in the field of semiconductors

Silicon carbide one-dimensional nanomaterials are expected to become an important component of the third-generation wide-bandgap semiconductor materials due to their unique micro-morphology and crystal structure, which have more unique properties and wider application prospects.

The third generation of semiconductor materials, namely wide bandgap semiconductor materials, also known as high temperature semiconductor materials, mainly include silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond and the like. These materials have a wide forbidden band width (forbidden band width greater than 2.2 ev), high thermal conductivity, high breakdown electric field, high radiation resistance, high electron saturation rate, etc., suitable for high temperature and high frequency. , anti-radiation and high-power devices. The third-generation semiconductor materials have broad application prospects in the future due to their excellent characteristics.

Application in the field of photovoltaics

Photovoltaic inverters are very important for photovoltaic power generation. They not only have a direct AC conversion function, but also have the function of maximizing solar cell performance and system fault protection. It can be summarized as automatic running and stopping function, maximum power tracking control function, anti-individual operation function (for grid-connected system), automatic voltage adjustment function (for grid-connected system), DC detection function (for grid-connected system), DC grounding detection Function (for grid-connected systems), etc.

Domestic inverter manufacturers still have too few applications for new technologies and new devices. Silicon carbide is the inverter of power devices, and it has begun to be used in large quantities. The internal resistance of silicon carbide is very small, and the efficiency can be made very high. It can reach 10K, and it can also save LC filter and bus capacitance. Silicon carbide materials may have a breakthrough in photovoltaic inverter applications.

Application in the aviation field

Silicon carbide is made into silicon carbide fiber. Silicon carbide fiber is mainly used as high temperature resistant material and reinforcing material. The high temperature resistant material includes heat shielding material, high temperature resistant conveyor belt, filter cloth for filtering high temperature gas or molten metal, and the like. When used as a reinforcing material, it is often used in combination with carbon fiber or glass fiber to reinforce metal (such as aluminum) and ceramics, such as brake pads for engine jets, engine blades, landing gearboxes, and fuselage structural materials. It can be used as a sporting goods, and its chopped fibers can be used as high-temperature furnace materials.

Silicon carbide raw materials can be supplied in large quantities, but the application of nano-sized silicon carbide powders with extremely high technical content is unlikely to form economies of scale in a short period of time. The research and development of silicon carbide wafers in China is still in its infancy. The application of silicon carbide wafers in China is less. The development of silicon carbide materials industry lacks the support of downstream application enterprises. Close cooperation on talent training and technology research and development; strengthen exchanges between enterprises, especially actively participate in international exchange activities, improve the level of enterprise development; pay attention to corporate brand building, and strive to build the company's fist products.

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